CS8N60A8H Datasheet and Replacement
Type Designator: CS8N60A8H
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 110
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 115
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2
Ohm
Package:
TO-220AB
- MOSFET Cross-Reference Search
CS8N60A8H Datasheet (PDF)
..1. Size:324K wuxi china
cs8n60a8h.pdf 
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS8N60 A8H General Description VDSS 600 V CS8N60 A8H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor c
8.1. Size:616K 1
jcs8n60s jcs8n60b jcs8n60c jcs8n60f.pdf 
N RN-CHANNEL MOSFETJCS8N60 Package MAIN CHARACTERISTICS 7.5 A ID 600 V VDSS Rdson 1.2 @Vgs=10V 54 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA
8.3. Size:809K jilin sino
jcs8n60bb jcs8n60sb jcs8n60cb jcs8n60fb.pdf 
N RN-CHANNEL MOSFET JCS8N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L
8.4. Size:837K jilin sino
jcs8n60f.pdf 
N RN-CHANNEL MOSFETJCS8N60C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 600 V Rdson 1.3 @Vgs=10VQg 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES
8.5. Size:347K crhj
cs8n60 a8h.pdf 
Silicon N-Channel Power MOSFET R CS8N60 A8H General Description VDSS 600 V CS8N60 A8H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
8.6. Size:352K crhj
cs8n60f a9h.pdf 
Silicon N-Channel Power MOSFET R CS8N60F A9H General Description VDSS 600 V CS8N60F A9H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
8.7. Size:215K crhj
cs8n60 ard.pdf 
Silicon N-Channel Power MOSFET R CS8N60 ARD General Description VDSS 600 V CS8N60 ARD, the silicon N-channel Enhanced ID 8 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
8.8. Size:228K crhj
cs8n60 a8d.pdf 
Silicon N-Channel Power MOSFET R CS8N60 A8D General Description VDSS 600 V CS8N60 A8D, the silicon N-channel Enhanced ID 8 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
8.9. Size:2681K citcorp
cs8n60fa9h.pdf 
CS8N60FA9H600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability.0.189(4.80)0.173(4.40) Low gate charge.0.409(10.40)0.378(9.60) 0.114(2.90) Low reverse transfer capacitances.0.098(2.50) 100% single pulse avalanche energy test.0.638(16.20)0.606(15.40)Marking code Mechanical dataG D S Epo
8.10. Size:238K lzg
cs8n60f.pdf 
BRF8N60(CS8N60F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)
8.11. Size:232K wuxi china
cs8n60fa9h.pdf 
Silicon N-Channel Power MOSFET R CS8N60F A9H General Description VDSS 600 V CS8N60F A9H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
8.12. Size:443K convert
cs8n60f cs8n60p cs8n60u cs8n60d cs8n65f-b.pdf 
CS8N60F,CS8N60P, nvertSuzhou Convert Semiconductor Co ., Ltd.CS8N60U,CS8N60D,CS8N65F-B600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS
8.13. Size:436K convert
cs8n60f cs8n60p cs8n60u cs8n60d.pdf 
nvertCS8N60F,CS8N60P,CS8N60U,CS8N60DSuzhou Convert Semiconductor Co ., Ltd.600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N60F TO-220F
Datasheet: FMP36-015P
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History: GSM3030
| IRF6612
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