All MOSFET. CS8N60F Datasheet

 

CS8N60F MOSFET. Datasheet pdf. Equivalent

Type Designator: CS8N60F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 48 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 7.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 60.5 nS

Drain-Source Capacitance (Cd): 105 pF

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: TO-220FL

CS8N60F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS8N60F Datasheet (PDF)

1.1. cs8n60fa9h.pdf Size:2681K _update_mosfet

CS8N60F
CS8N60F

CS8N60FA9H 600V Silicon N-Channel Power MOSFET ■ Features ■ Outline • Fast switching. TO-220F • ESD improved capability. 0.189(4.80) 0.173(4.40) • Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) • Low reverse transfer capacitances. 0.098(2.50) • 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code ■ Mechanical data G D S • Epo

1.2. cs8n60f.pdf Size:238K _update_mosfet

CS8N60F
CS8N60F

BRF8N60(CS8N60F) N-Channel MOSFET/N 沟 MOS 晶体管 用途:用于高效 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 Features: Low gate charge, low crss, fast switching. 极限参数/Absolute maximum ratings(Ta=25℃) 参

 1.3. cs8n60f a9h.pdf Size:352K _crhj

CS8N60F
CS8N60F

Silicon N-Channel Power MOSFET R ○ CS8N60F A9H General Description: VDSS 600 V CS8N60F A9H, the silicon N-channel Enhanced ID 8 A PD(TC=25℃) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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