All MOSFET. CS8N65A8H Datasheet

 

CS8N65A8H Datasheet and Replacement


   Type Designator: CS8N65A8H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO-220AB
      - MOSFET Cross-Reference Search

 

CS8N65A8H Datasheet (PDF)

 ..1. Size:347K  wuxi china
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CS8N65A8H

Silicon N-Channel Power MOSFET R CS8N65 A8H General Description VDSS 650 V CS8N65 A8H, the silicon N-channel Enhanced ID 8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25) 110 W RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

 7.1. Size:355K  wuxi china
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CS8N65A8H

Silicon N-Channel Power MOSFET R CS8N65 A0H General Description VDSS 650 V CS8N65 A0H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:1248K  jilin sino
 jcs8n65v jcs8n65r jcs8n65c jcs8n65f jcs8n65s jcs8n65b.pdf pdf_icon

CS8N65A8H

N RN-CHANNEL MOSFET JCS8N65C MAIN CHARACTERISTICS Package 88888888 8ID .0 A VDSS 650 V Rdson-max1.35 @Vgs=10V Qg-typ 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED

 8.2. Size:354K  crhj
 cs8n65f a9h.pdf pdf_icon

CS8N65A8H

Silicon N-Channel Power MOSFET R CS8N65F A9H General Description VDSS 650 V CS8N65F A9H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

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