CSB4110 Specs and Replacement
Type Designator: CSB4110
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 370 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-254A
CSB4110 substitution
- MOSFET ⓘ Cross-Reference Search
CSB4110 datasheet
csb4110.pdf
CSB4110 N PD TC=25 370 W ID VGS=10V,TC=25 180 A ID VGS=10V,TC=100 130 A IDM 670 A VGS 20 V Tjm +175 Tstg -55 +175 RthJC 0.042 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=75A 0.01 VGS th VDS=VGS,I... See More ⇒
Detailed specifications: CS9530, CS9532, CS9540, CS9620, CS9640, CS9945BEY, CS9N90ANHD, CS9N90FA9D, RFP50N06, CSB4710, CSBF30, CSE110, CSE130, CSE220, CSE230, CSE9130, CSE9210
Keywords - CSB4110 MOSFET specs
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