CSE130 Specs and Replacement
Type Designator: CSE130
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-257
CSE130 substitution
- MOSFET ⓘ Cross-Reference Search
CSE130 datasheet
cse130.pdf
CSE130 N PD TC=25 25 W 0.17 W/ ID VGS=10V,TC=25 8 A ID VGS=10V,TC=100 5 A IDM 32 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 5.8 /W BVDSS VGS=0V,ID=1.0mA 100 V VGS=10V,ID=5.0A 0.18 RDS on ... See More ⇒
Detailed specifications: CS9640, CS9945BEY, CS9N90ANHD, CS9N90FA9D, CSB4110, CSB4710, CSBF30, CSE110, 20N50, CSE220, CSE230, CSE9130, CSE9210, CSF230, CSF9024, CSI460, CSI4N60
Keywords - CSE130 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
