CSD13302W MOSFET. Datasheet pdf. Equivalent
Type Designator: CSD13302W
Marking Code: 302
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
|Id|ⓘ - Maximum Drain Current: 1.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 211 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0171 Ohm
Package: DSBGA
CSD13302W Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CSD13302W Datasheet (PDF)
csd13302w.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD13302WSLPS535 MARCH 2015CSD13302W 12 V N Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low On ResistanceTA = 25C TYPICAL VALUE UNIT Low Qg and QgdVDS Drain-to-Source Voltage 12 V Small Footprint 1 mm 1 mmQg Gate Charge Total (4.5 V) 6.0 nC Low
csd13306w.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD13306WSLPS537 MARCH 2015CSD13306W 12 V N Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low on ResistanceTA = 25C TYPICAL VALUE UNIT Low Qg and QgdVDS Drain-to-Source Voltage 12 V Small Footprint 1 1.5 mmQg Gate Charge Total (4.5 V) 8.6 nC Low
csd13303w1015.pdf
CSD13303W1015www.ti.com SLPS298A MAY 2012 REVISED MAY 2012N-Channel NexFET Power MOSFETCheck for Samples: CSD13303W10151FEATURESPRODUCT SUMMARY Ultra Low on ResistanceTA = 25C unless otherwise stated TYPICAL VALUE UNIT Ultra Low Qg and QgdVDS Drain to Source Voltage 12 V Small FootprintQg Gate Charge Total (4.5V) 3.9 nCQgd Gate Charge Gate to Drain
csd13383f4.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD13383F4SLPS517 DECEMBER 2014CSD13383F4 12 V N-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Ultra Low Qg and QgdVDS Drain-to-Source Voltage 12 V Ultra-Small Footprint (0402 Case Size)Qg Gate Charge Total (4.5 V) 2.0 n
csd13381f4.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD13381F4SLPS448D JULY 2013 REVISED MAY 2015CSD13381F4 12 V N-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Low Qg and QgdVDS Drain-to-Source Voltage 12 V Low Threshold VoltageQg Gate Charge Total (4.5 V) 1060 pC
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918