CSD13302W Specs and Replacement

Type Designator: CSD13302W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 211 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0171 Ohm

Package: DSBGA

CSD13302W substitution

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CSD13302W datasheet

 ..1. Size:1103K  texas
 csd13302w.pdf pdf_icon

CSD13302W

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD13302W SLPS535 MARCH 2015 CSD13302W 12 V N Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra Low On Resistance TA = 25 C TYPICAL VALUE UNIT Low Qg and Qgd VDS Drain-to-Source Voltage 12 V Small Footprint 1 mm 1 mm Qg Gate Charge Total (4.5 V) 6.0 nC Low... See More ⇒

 7.1. Size:1285K  texas
 csd13306w.pdf pdf_icon

CSD13302W

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD13306W SLPS537 MARCH 2015 CSD13306W 12 V N Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra Low on Resistance TA = 25 C TYPICAL VALUE UNIT Low Qg and Qgd VDS Drain-to-Source Voltage 12 V Small Footprint 1 1.5 mm Qg Gate Charge Total (4.5 V) 8.6 nC Low ... See More ⇒

 7.2. Size:1497K  texas
 csd13303w1015.pdf pdf_icon

CSD13302W

CSD13303W1015 www.ti.com SLPS298A MAY 2012 REVISED MAY 2012 N-Channel NexFET Power MOSFET Check for Samples CSD13303W1015 1 FEATURES PRODUCT SUMMARY Ultra Low on Resistance TA = 25 C unless otherwise stated TYPICAL VALUE UNIT Ultra Low Qg and Qgd VDS Drain to Source Voltage 12 V Small Footprint Qg Gate Charge Total (4.5V) 3.9 nC Qgd Gate Charge Gate to Drain ... See More ⇒

 8.1. Size:1297K  texas
 csd13383f4.pdf pdf_icon

CSD13302W

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD13383F4 SLPS517 DECEMBER 2014 CSD13383F4 12 V N-Channel FemtoFET MOSFET 1 Features Product Summary 1 Low On-Resistance TA = 25 C TYPICAL VALUE UNIT Ultra Low Qg and Qgd VDS Drain-to-Source Voltage 12 V Ultra-Small Footprint (0402 Case Size) Qg Gate Charge Total (4.5 V) 2.0 n... See More ⇒

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Detailed specifications: CSY9130, CSY9140, CSY9140C, CSZ14, CSZ34, CSD024, CSD13201W10, CSD13202Q2, IRF540, CSD13303W1015, CSD13306W, CSD13381F4, CSD13383F4, CSD15571Q2, CSD16301Q2, CSD16321Q5, CSD16322Q5

Keywords - CSD13302W MOSFET specs

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