All MOSFET. CSD13381F4 Datasheet

 

CSD13381F4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CSD13381F4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 2.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1060 nC
   trⓘ - Rise Time: 1.5 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: PICOSTAR

 CSD13381F4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CSD13381F4 Datasheet (PDF)

 ..1. Size:1122K  texas
 csd13381f4.pdf

CSD13381F4 CSD13381F4

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD13381F4SLPS448D JULY 2013 REVISED MAY 2015CSD13381F4 12 V N-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Low Qg and QgdVDS Drain-to-Source Voltage 12 V Low Threshold VoltageQg Gate Charge Total (4.5 V) 1060 pC

 7.1. Size:1297K  texas
 csd13383f4.pdf

CSD13381F4 CSD13381F4

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD13383F4SLPS517 DECEMBER 2014CSD13383F4 12 V N-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Ultra Low Qg and QgdVDS Drain-to-Source Voltage 12 V Ultra-Small Footprint (0402 Case Size)Qg Gate Charge Total (4.5 V) 2.0 n

 8.1. Size:1285K  texas
 csd13306w.pdf

CSD13381F4 CSD13381F4

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD13306WSLPS537 MARCH 2015CSD13306W 12 V N Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low on ResistanceTA = 25C TYPICAL VALUE UNIT Low Qg and QgdVDS Drain-to-Source Voltage 12 V Small Footprint 1 1.5 mmQg Gate Charge Total (4.5 V) 8.6 nC Low

 8.2. Size:1103K  texas
 csd13302w.pdf

CSD13381F4 CSD13381F4

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD13302WSLPS535 MARCH 2015CSD13302W 12 V N Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low On ResistanceTA = 25C TYPICAL VALUE UNIT Low Qg and QgdVDS Drain-to-Source Voltage 12 V Small Footprint 1 mm 1 mmQg Gate Charge Total (4.5 V) 6.0 nC Low

 8.3. Size:1497K  texas
 csd13303w1015.pdf

CSD13381F4 CSD13381F4

CSD13303W1015www.ti.com SLPS298A MAY 2012 REVISED MAY 2012N-Channel NexFET Power MOSFETCheck for Samples: CSD13303W10151FEATURESPRODUCT SUMMARY Ultra Low on ResistanceTA = 25C unless otherwise stated TYPICAL VALUE UNIT Ultra Low Qg and QgdVDS Drain to Source Voltage 12 V Small FootprintQg Gate Charge Total (4.5V) 3.9 nCQgd Gate Charge Gate to Drain

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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