CSD13383F4 Specs and Replacement
Type Designator: CSD13383F4
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 123 nS
Cossⓘ - Output Capacitance: 68 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
Package: PICOSTAR
CSD13383F4 substitution
- MOSFET ⓘ Cross-Reference Search
CSD13383F4 datasheet
csd13383f4.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD13383F4 SLPS517 DECEMBER 2014 CSD13383F4 12 V N-Channel FemtoFET MOSFET 1 Features Product Summary 1 Low On-Resistance TA = 25 C TYPICAL VALUE UNIT Ultra Low Qg and Qgd VDS Drain-to-Source Voltage 12 V Ultra-Small Footprint (0402 Case Size) Qg Gate Charge Total (4.5 V) 2.0 n... See More ⇒
csd13306w.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD13306W SLPS537 MARCH 2015 CSD13306W 12 V N Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra Low on Resistance TA = 25 C TYPICAL VALUE UNIT Low Qg and Qgd VDS Drain-to-Source Voltage 12 V Small Footprint 1 1.5 mm Qg Gate Charge Total (4.5 V) 8.6 nC Low ... See More ⇒
csd13302w.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD13302W SLPS535 MARCH 2015 CSD13302W 12 V N Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra Low On Resistance TA = 25 C TYPICAL VALUE UNIT Low Qg and Qgd VDS Drain-to-Source Voltage 12 V Small Footprint 1 mm 1 mm Qg Gate Charge Total (4.5 V) 6.0 nC Low... See More ⇒
Detailed specifications: CSZ34, CSD024, CSD13201W10, CSD13202Q2, CSD13302W, CSD13303W1015, CSD13306W, CSD13381F4, IRF640, CSD15571Q2, CSD16301Q2, CSD16321Q5, CSD16322Q5, CSD16323Q3, CSD16325Q5, CSD16327Q3, CSD16340Q3
Keywords - CSD13383F4 MOSFET specs
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History: 5N65KG-TMS4-T
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