CSD16322Q5 MOSFET Datasheet: N-Ch, 25V, 21A. Full specification with pinout and replacement list

CSD16322Q5 Specs and Replacement

Type Designator: CSD16322Q5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.7 nS

Cossⓘ - Output Capacitance: 740 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: SON5X6 SUPERSO8

CSD16322Q5 substitution

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CSD16322Q5 datasheet

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CSD16325Q5 www.ti.com SLPS218C AUGUST 2009 REVISED APRIL 2010 N-Channel NexFET Power MOSFETs Check for Samples CSD16325Q5 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 25 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 18 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 3.5 nC Avalanche Rated VGS = 3V 2.1 ... See More ⇒

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CSD16327Q3 www.ti.com SLPS371 DECEMBER 2011 N-Channel NexFET Power MOSFET Check for Samples CSD16327Q3 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 25 V Ultra Low Qg and Qgd Qg Gate Charge Total (4.5V) 6.2 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.1 nC VGS = 3V 5 m Avalanche Rated RDS(on) Drain to ... See More ⇒

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