CSD16327Q3 Specs and Replacement

Type Designator: CSD16327Q3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 740 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: SON3.3X3.3 SUPERSO8

CSD16327Q3 substitution

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CSD16327Q3 datasheet

 ..1. Size:1195K  texas
 csd16327q3.pdf pdf_icon

CSD16327Q3

CSD16327Q3 www.ti.com SLPS371 DECEMBER 2011 N-Channel NexFET Power MOSFET Check for Samples CSD16327Q3 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 25 V Ultra Low Qg and Qgd Qg Gate Charge Total (4.5V) 6.2 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.1 nC VGS = 3V 5 m Avalanche Rated RDS(on) Drain to ... See More ⇒

 7.1. Size:802K  texas
 csd16325q5.pdf pdf_icon

CSD16327Q3

CSD16325Q5 www.ti.com SLPS218C AUGUST 2009 REVISED APRIL 2010 N-Channel NexFET Power MOSFETs Check for Samples CSD16325Q5 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 25 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 18 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 3.5 nC Avalanche Rated VGS = 3V 2.1 ... See More ⇒

 7.2. Size:757K  texas
 csd16321q5.pdf pdf_icon

CSD16327Q3

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 7.3. Size:763K  texas
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CSD16327Q3

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Detailed specifications: CSD13381F4, CSD13383F4, CSD15571Q2, CSD16301Q2, CSD16321Q5, CSD16322Q5, CSD16323Q3, CSD16325Q5, IRFB4227, CSD16340Q3, CSD16342Q5A, CSD16401Q5, CSD16403Q5A, CSD16404Q5A, CSD16406Q3, CSD16407Q5, CSD16408Q5

Keywords - CSD16327Q3 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs