All MOSFET. CSD17555Q5A Datasheet

 

CSD17555Q5A Datasheet and Replacement


   Type Designator: CSD17555Q5A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.9 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 23 nC
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 949 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: SON5X6
 

 CSD17555Q5A substitution

   - MOSFET ⓘ Cross-Reference Search

 

CSD17555Q5A Datasheet (PDF)

 ..1. Size:1257K  texas
csd17555q5a.pdf pdf_icon

CSD17555Q5A

CSD17555Q5Awww.ti.com SLPS353 JUNE 201230V N-Channel NexFET Power MOSFETsCheck for Samples: CSD17555Q5APRODUCT SUMMARY1FEATURESTA = 25C unless otherwise stated TYPICAL VALUE UNIT2 Ultralow Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 23 nC Avalanche RatedQgd Gate Charge Gate to Drain 5 nC Pb Free T

 7.1. Size:1379K  texas
csd17556q5b.pdf pdf_icon

CSD17555Q5A

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17556Q5BSLPS392B MARCH 2013REVISED OCTOBER 2014CSD17556Q5B 30 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Extremely Low ResistanceTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge

 7.2. Size:1256K  texas
csd17551q5a.pdf pdf_icon

CSD17555Q5A

CSD17551Q5Awww.ti.com SLPS375 MAY 201230V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17551Q5A1FEATURESPRODUCT SUMMARY Ultra Low Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 6.0 nC Avalanche RatedQgd Gate Charge Gate to Drain 1.4 nCVGS = 4.5V 9 m Pb Free Terminal PlatingRDS(on) Drain to S

 7.3. Size:1261K  texas
csd17553q5a.pdf pdf_icon

CSD17555Q5A

CSD17553Q5Awww.ti.com SLPS373 MAY 201230V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17553Q5A1FEATURESPRODUCT SUMMARY Ultralow Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 17.5 nC Avalanche RatedQgd Gate Charge Gate to Drain 4.7 nCVGS = 4.5V 3.5 m Pb Free Terminal PlatingRDS(on) Drain to

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

Keywords - CSD17555Q5A MOSFET datasheet

 CSD17555Q5A cross reference
 CSD17555Q5A equivalent finder
 CSD17555Q5A lookup
 CSD17555Q5A substitution
 CSD17555Q5A replacement

 

 
Back to Top

 


 
.