CSD18502Q5B MOSFET Datasheet: N-Ch, 40V, 26A. Full specification with pinout and replacement list

CSD18502Q5B Specs and Replacement

Type Designator: CSD18502Q5B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.8 nS

Cossⓘ - Output Capacitance: 900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm

Package: SON5X6

CSD18502Q5B substitution

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CSD18502Q5B datasheet

..1. Size:938K texas
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Sample & Support & Reference Product Technical Tools & Buy Community Design Folder Documents Software CSD18502Q5B SLPS320A NOVEMBER 2012 REVISED JULY 2015 CSD18502Q5B 40 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain to source voltage 40 V Avalanche Rated Qg Gate... See More ⇒

6.1. Size:754K texas
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Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD18502KCS SLPS367B AUGUST 2012 REVISED JULY 2014 CSD18502KCS 40-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 40 V Avalanche Rated Qg Gate Charge Total (10V... See More ⇒

7.1. Size:1001K texas
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Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD18509Q5B SLPS476 JUNE 2014 CSD18509Q5B N-Channel NexFET Power MOSFETs 1 Features Product Summary 1 Ultra-Low On Resistance TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 40 V Avalanche Rated Qg Gate Charge Total (10 V) 150 nC Logic Leve... See More ⇒

7.2. Size:1281K texas
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Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD18501Q5A SLPS319C JUNE 2012 REVISED JANUARY 2015 CSD18501Q5A 40 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 40 V Avalanche Rated Qg Gate Charge Total (4... See More ⇒