All MOSFET. CSD19536KCS Datasheet

 

CSD19536KCS Datasheet and Replacement


   Type Designator: CSD19536KCS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 1820 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: TO-220
 

 CSD19536KCS substitution

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CSD19536KCS Datasheet (PDF)

 ..1. Size:404K  texas
csd19536kcs.pdf pdf_icon

CSD19536KCS

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19536KCSSLPS485B JANUARY 2014 REVISED OCTOBER 2014CSD19536KCS 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Tota

 5.1. Size:876K  texas
csd19536ktt.pdf pdf_icon

CSD19536KCS

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19536KTTSLPS540A MARCH 2015 REVISED MAY 2015CSD19536KTT 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 100 V Avalanche RatedQg Gate charge total (10 V

 7.1. Size:1281K  texas
csd19531q5a.pdf pdf_icon

CSD19536KCS

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19531Q5ASLPS406B SEPTEMBER 2013 REVISED MAY 2014CSD19531Q5A 100 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total

 7.2. Size:504K  texas
csd19537q3.pdf pdf_icon

CSD19536KCS

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19537Q3SLPS549 AUGUST 2015CSD19537Q3 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V) 16 nC Pb-Free

Datasheet: CSD19532KTT , CSD19532Q5B , CSD19533KCS , CSD19533Q5A , CSD19534KCS , CSD19534Q5A , CSD19535KCS , CSD19535KTT , P55NF06 , CSD19536KTT , CSD19537Q3 , CSD22202W15 , CSD22204W , CSD23201W10 , CSD23202W10 , CSD23203W , CSD23381F4 .

History: F5042 | RQJ0305EQDQA | VBTA161K | KRLML6401 | P057AAT | AON6266 | MTP3N40

Keywords - CSD19536KCS MOSFET datasheet

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