All MOSFET. NDT451AN Equivalents Search

February 2009 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field 7.2A, 30V. RDS(ON) = 0.035 @ VGS = 10V effect transistors are produced using Fairchild's RDS(ON) = 0.05 @ VGS = 4.5V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini... See More ⇒

NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field 7.2A, 30V. RDS(ON) = 0.035 @ VGS = 10V effect transistors are produced using ON RDS(ON) = 0.05 @ VGS = 4.5V. Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially High density cell d... See More ⇒

NDT451AN www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = 10 V 0.019 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.021 ID (A) 7 Configuration Single D SOT-223 G D S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARA... See More ⇒

December 1998 NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field -7.5 A, -30 V. RDS(ON) = 0.030 @ VGS = -10 V effect transistors are produced using Fairchild's RDS(ON) = 0.045 @ VGS = -4.5 V. proprietary, high cell density, DMOS technology. This very high density process is especially tailo... See More ⇒

June 1996 NDT454P P-Channel Enhancement Mode Field Effect Transistor General Description Features -5.9A, -30V. RDS(ON) = 0.05 @ VGS = -10V Power SOT P-Channel enhancement mode power field effect RDS(ON) = 0.07 @ VGS = -6V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.09 @ VGS = -4.5V. density, DMOS technology. This very high density process is... See More ⇒

June 1996 NDT452AP P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field -5A, -30V. RDS(ON) = 0.065 @ VGS = -10V effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.1 @ VGS = -4.5V. high cell density, DMOS technology. This very high density process is especially tailored to minimiz... See More ⇒

NDT454P P-Channel Enhancement Mode Field Effect Transistor General Description Features -5.9A, -30V. RDS(ON) = 0.05 @ VGS = -10V Power SOT P-Channel enhancement mode power field effect RDS(ON) = 0.07 @ VGS = -6V transistors are produced using ON Semiconductor's RDS(ON) = 0.09 @ VGS = -4.5V. proprietary, high cell density, DMOS technology. This very high density process is e... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

NDT456P www.VBsemi.tw P-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET - 35 9.8 nC 0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S APPLICATIONS Load S... See More ⇒

NDT454P www.VBsemi.tw P-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET - 35 9.8 nC 0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S APPLICATIONS Load S... See More ⇒

NDT452AP-NL www.VBsemi.tw P-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET - 35 9.8 nC 0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S APPLICATIONS Lo... See More ⇒