KDB3652 MOSFET Datasheet: N-Ch, 100V, 61A. Full specification with pinout and replacement list

KDB3652 Specs and Replacement

Type Designator: KDB3652

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 61 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO-263

KDB3652 substitution

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KDB3652 datasheet

..1. Size:52K kexin
kdb3652.pdf pdf_icon

SMD Type MOSFET N-Channel PowerTrench MOSFET KDB3652 (FDB3652) TO-263 Unit mm Features rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A +0.2 4.57-0.2 +0.1 1.27-0.1 Qg(tot) = 41nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode +0.1 0.1max 1.27-0.1 UIS Capability (Single Pulse and Repetitive Pulse) +0.1 0.81-0.1 2.54 1Gate +0.2 2Drain 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 ... See More ⇒

9.1. Size:52K kexin
kdb3672.pdf pdf_icon

SMD Type MOSFET N-Channel PowerTrench MOSFET KDB3672 (FDB3672) TO-263 Features Unit mm rDS(ON) =24m (Typ.), VGS = 10V, ID =44A +0.2 4.57-0.2 +0.1 1.27-0.1 Qg(tot) = 24nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode +0.1 0.1max UIS Capability (Single Pulse and Repetitive Pulse) 1.27-0.1 +0.1 0.81-0.1 2.54 1Gate +0.2 2Drain 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 3... See More ⇒

9.2. Size:52K kexin
kdb3632.pdf pdf_icon

SMD Type MOSFET N-Channel PowerTrench MOSFET KDB3632(FDB3632) TO-263 Unit mm Features rDS(ON) =7.5m (Typ.), VGS = 10V, ID = 80A +0.2 4.57-0.2 +0.1 1.27-0.1 Qg(tot) = 84nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode +0.1 0.1max 1.27-0.1 UIS Capability (Single Pulse and Repetitive Pulse) +0.1 0.81-0.1 2.54 1Gate +0.2 2Drain 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 3... See More ⇒

9.3. Size:52K kexin
kdb3682.pdf pdf_icon

SMD Type MOSFET N-Channel PowerTrench MOSFET KDB3682 (FDB3682) TO-263 Unit mm Features +0.2 rDS(ON) =32m (Typ.), VGS = 10V, ID =32A 4.57-0.2 +0.1 1.27-0.1 Qg(tot) = 18.5nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode +0.1 0.1max 1.27-0.1 UIS Capability (Single Pulse and Repetitive Pulse) +0.1 0.81-0.1 2.54 1Gate +0.2 2Drain 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 ... See More ⇒

Detailed specifications: K2837B, KDB15N50, KDB2532, KDB2552, KDB2570, KDB2572, KDB2670, KDB3632, IRF1405, KDB3672, KDB3682, KDB4020P, KDB5690, KDB6030L, KDB7045L, KDC6020C, KDD2572