NDT455N MOSFET. Datasheet pdf. Equivalent
Type Designator: NDT455N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 11.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 61 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: SOT223
NDT455N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NDT455N Datasheet (PDF)
ndt451an.pdf
February 2009 NDT451ANN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesPower SOT N-Channel enhancement mode power field 7.2A, 30V. RDS(ON) = 0.035 @ VGS = 10Veffect transistors are produced using Fairchild's RDS(ON) = 0.05 @ VGS = 4.5V. proprietary, high cell density, DMOS technology. This veryhigh density process is especially tailored to mini
ndt456p.pdf
December 1998 NDT456PP-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesPower SOT P-Channel enhancement mode power field-7.5 A, -30 V. RDS(ON) = 0.030 @ VGS = -10 Veffect transistors are produced using Fairchild's RDS(ON) = 0.045 @ VGS = -4.5 V.proprietary, high cell density, DMOS technology. Thisvery high density process is especially tailo
ndt454p.pdf
June 1996 NDT454PP-Channel Enhancement Mode Field Effect TransistorGeneral Description Features-5.9A, -30V. RDS(ON) = 0.05 @ VGS = -10VPower SOT P-Channel enhancement mode power field effect RDS(ON) = 0.07 @ VGS = -6Vtransistors are produced using Fairchild's proprietary, high cellRDS(ON) = 0.09 @ VGS = -4.5V.density, DMOS technology. This very high density process is
ndt452ap.pdf
June 1996 NDT452APP-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesPower SOT P-Channel enhancement mode power field -5A, -30V. RDS(ON) = 0.065 @ VGS = -10Veffect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.1 @ VGS = -4.5V.high cell density, DMOS technology. This very high densityprocess is especially tailored to minimiz
ndt451an.pdf
NDT451ANN-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesPower SOT N-Channel enhancement mode power field 7.2A, 30V. RDS(ON) = 0.035 @ VGS = 10Veffect transistors are produced using ON RDS(ON) = 0.05 @ VGS = 4.5V. Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially High density cell d
ndt454p.pdf
NDT454PP-Channel Enhancement Mode Field Effect TransistorGeneral Description Features-5.9A, -30V. RDS(ON) = 0.05 @ VGS = -10VPower SOT P-Channel enhancement mode power field effect RDS(ON) = 0.07 @ VGS = -6Vtransistors are produced using ON Semiconductor's RDS(ON) = 0.09 @ VGS = -4.5V.proprietary, high cell density, DMOS technology. This very high density process is e
ndt452ap.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
ndt451an.pdf
NDT451ANwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.019 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.021ID (A) 7Configuration SingleDSOT-223GDSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARA
ndt456p.pdf
NDT456Pwww.VBsemi.twP-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET- 35 9.8 nC0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS APPLICATIONS Load S
ndt454p.pdf
NDT454Pwww.VBsemi.twP-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET- 35 9.8 nC0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS APPLICATIONS Load S
ndt452ap-nl.pdf
NDT452AP-NLwww.VBsemi.twP-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET- 35 9.8 nC0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS APPLICATIONS Lo
Datasheet: NDT3055L , NDT410EL , NDT451AN , NDT451N , NDT452AP , NDT452P , NDT453N , NDT454P , IRFP460 , NDT456P , OM11N55SA , OM11N60SA , OM1N100SA , OM1N100ST , OM3N100SA , OM3N100ST , OM5N100SA .
