KDW2504P PDF and Equivalents Search

 

KDW2504P Specs and Replacement

Type Designator: KDW2504P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 446 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm

Package: TSSOP-8

KDW2504P substitution

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KDW2504P datasheet

 ..1. Size:62K  kexin
kdw2504p.pdf pdf_icon

KDW2504P

SMD Type IC SMD Type IC Dual P-Channel 2.5V Specified PowerTrench MOSFET KDW2504P TSSOP-8 Features Unit mm -3.8 A, - 20 V. RDS(ON) = 0.043 @VGS =-4.5V RDS(ON) = 0.070 @VGS =-2.5V Low gate charge High performance trench technology for extremely low RDS(ON) Extended VGSS range ( 12V) for battery applications Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Sou... See More ⇒

 8.1. Size:63K  kexin
kdw2503n.pdf pdf_icon

KDW2504P

SMD Type IC SMD Type IC Dual N-Channel 2.5V Specified PowerTrench MOSFET KDW2503N TSSOP-8 Features Unit mm 5.5 A, 20 V. RDS(ON) = 0.021 @VGS =4.5 V RDS(ON) = 0.035 @VGS =2.5V Fast switching speed High performance trench technology for extremely low RDS(ON) Extended VGSS range ( 12V) for battery applications Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to So... See More ⇒

 9.1. Size:70K  kexin
kdw2521c.pdf pdf_icon

KDW2504P

SMD Type IC SMD Type IC Complementary PowerTrench MOSFET KDW2521C Features TSSOP-8 Unit mm N-Channel 5.5A, 20V RDS(ON) =21m @VGS =4.5 V RDS(ON) = 35m @VGS =2.5V P-Channel -3.8 A, 20 V RDS(ON) =43m @ VGS =- 4.5 V RDS(ON) =70m @VGS =-2.5V High performance trench technology for extremely low RDS(ON) Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P- Channel Unit Drain ... See More ⇒

 9.2. Size:62K  kexin
kdw258p.pdf pdf_icon

KDW2504P

SMD Type IC SMD Type IC P-Channel 1.8V Specified PowerTrench MOSFET KDW258P TSSOP-8 Features Unit mm -9 A, -12 V. RDS(ON) = 11m @VGS =-4.5V RDS(ON) = 14m @VGS =-2.5V RDS(ON) = 20m @VGS =-1.8V Rds ratings for use with 1.8 V logic High performance trench technology for extremely low RDS(ON) 1,5,8 Drain Low gate charge 2,3,6,7 Source Low profile TSSOP-8 package 4 Gate Absolute... See More ⇒

Detailed specifications: KDS6685, KDS6910, KDS8333C, KDS8928A, KDS8958, KDS9952A, KDV303N, KDW2503N, IRLZ44N, KDW2521C, KDW258P, KE3587-G, KF10N65F, KF16N25D, KF16N25F, KF19N20D, KF19N20F

Keywords - KDW2504P MOSFET specs

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