KF5N50FR PDF and Equivalents Search

KF5N50PR/FR/PS/FS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N50PR, KF5N50PS A This planar stripe MOSFET has better characteristics, such as fast O C switching time, fast reverse recovery time, low on resistance, low gate F charge and excellent avalanche characteristics. It is mainly suitable for E DIM MILLIMETERS G _ + electronic... See More ⇒

KF5N50P/F/PZ/FZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N50P, KF5N50PZ A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ + switching mode pow... See More ⇒

KF5N50FZA/FSA SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS=... See More ⇒

KF5N50PZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ + switching mode power supplies. A 9.9 0.2 B ... See More ⇒

KF5N50D/DZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 switching mode p... See More ⇒

KF5N50DS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic ba... See More ⇒

KF5N50DZ/DS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic... See More ⇒

KF5N50PS/FS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N50PS A This planar stripe MOSFET has better characteristics, such as fast O C switching time, fast reverse recovery time, low on resistance, low gate F charge and excellent avalanche characteristics. It is mainly suitable for E DIM MILLIMETERS G _ + electronic ballast and swi... See More ⇒

KF5N50DZ/IZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N50DZ This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 ... See More ⇒