KP11N60F Specs and Replacement
Type Designator: KP11N60F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO-220IS
KP11N60F substitution
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KP11N60F datasheet
kp11n60f.pdf
KP11N60F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power suppl... See More ⇒
kp11n60d.pdf
KP11N60D SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS L avalanche characteristics. It is mainly suitable for active power factor C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 correction and swit... See More ⇒
Detailed specifications: KO3409, KO3413, KO3414, KO3416, KO3419, KO3423, KO8822, KP11N60D, AON7410, KP819AC, KP821A, KP821B, KP826AC, KP8M10, KP8M3, KP8M4, KP8M5
Keywords - KP11N60F MOSFET specs
KP11N60F cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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