All MOSFET. KP11N60F Datasheet

 

KP11N60F Datasheet and Replacement


   Type Designator: KP11N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-220IS
 

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KP11N60F Datasheet (PDF)

 ..1. Size:382K  kec
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KP11N60F

KP11N60FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis Super Junction MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERS_A 10.16 0.2+correction and switching mode power suppl

 7.1. Size:380K  kec
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KP11N60F

KP11N60DSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This Super Junction MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSLavalanche characteristics. It is mainly suitable for active power factorC D_A 6.60 + 0.20_B 6.10 + 0.20correction and swit

Datasheet: KO3409 , KO3413 , KO3414 , KO3416 , KO3419 , KO3423 , KO8822 , KP11N60D , AON7410 , KP819AC , KP821A , KP821B , KP826AC , KP8M10 , KP8M3 , KP8M4 , KP8M5 .

History: AOD474B | IRLML5103PBF

Keywords - KP11N60F MOSFET datasheet

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