KP979A
MOSFET. Datasheet pdf. Equivalent
Type Designator: KP979A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 120
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 90
pF
Package: KT-56
KP979A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KP979A
Datasheet (PDF)
..1. Size:101K syntez microelectronics
kp979a.pdf
Syntez MicroelectronicsKP979ASILICON MOS N-CHANNEL POWER TRANSISTOR60 W, up to 230 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Performance at 230 MHz, 28 Vdc Power Gain: 14 dB Min Output Power: 60 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value Uni
9.1. Size:101K syntez microelectronics
kp979vc.pdf
Syntez MicroelectronicsKP979VCSILICON MOS N-CHANNEL POWER TRANSISTOR300 W, up to 230 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Performance at 230 MHz, 50 Vdc Power Gain: 14 dB Min Output Power: 300 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value
9.2. Size:101K syntez microelectronics
kp979b.pdf
Syntez MicroelectronicsKP979BSILICON MOS N-CHANNEL POWER TRANSISTOR150 W, up to 230 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Performance at 230 MHz, 28 Vdc Power Gain: 13 dB Min Output Power: 150 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value U
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