All MOSFET. KP979A Datasheet

 

KP979A Datasheet and Replacement


   Type Designator: KP979A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 90 pF
   Package: KT-56
 

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KP979A Datasheet (PDF)

 ..1. Size:101K  syntez microelectronics
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KP979A

Syntez MicroelectronicsKP979ASILICON MOS N-CHANNEL POWER TRANSISTOR60 W, up to 230 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Performance at 230 MHz, 28 Vdc Power Gain: 14 dB Min Output Power: 60 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value Uni

 9.1. Size:101K  syntez microelectronics
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KP979A

Syntez MicroelectronicsKP979VCSILICON MOS N-CHANNEL POWER TRANSISTOR300 W, up to 230 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Performance at 230 MHz, 50 Vdc Power Gain: 14 dB Min Output Power: 300 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value

 9.2. Size:101K  syntez microelectronics
kp979b.pdf pdf_icon

KP979A

Syntez MicroelectronicsKP979BSILICON MOS N-CHANNEL POWER TRANSISTOR150 W, up to 230 MHz, Enhancement ModeThe silicon MOS transistor is designed for professionaltransmitter applications in the HF/VHF frequencyrange.Features: Performance at 230 MHz, 28 Vdc Power Gain: 13 dB Min Output Power: 150 W Efficiency: 50 % MinAbsolute Maximum RatingsParameters Sym Value U

Datasheet: KP8N60D , KP8N60F , KP8N65D , KP977AC , KP978A , KP978BC , KP978GC , KP978VC , SKD502T , KP979B , KP979VC , KP980A , KP981A , KP981BC , KP981VC , KPA1716 , KPA1750 .

History: NCEP02525K

Keywords - KP979A MOSFET datasheet

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