KP979A Specs and Replacement
Type Designator: KP979A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 90 pF
Package: KT-56
KP979A substitution
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KP979A datasheet
kp979a.pdf
Syntez Microelectronics KP979A SILICON MOS N-CHANNEL POWER TRANSISTOR 60 W, up to 230 MHz, Enhancement Mode The silicon MOS transistor is designed for professional transmitter applications in the HF/VHF frequency range. Features Performance at 230 MHz, 28 Vdc Power Gain 14 dB Min Output Power 60 W Efficiency 50 % Min Absolute Maximum Ratings Parameters Sym Value Uni... See More ⇒
kp979vc.pdf
Syntez Microelectronics KP979VC SILICON MOS N-CHANNEL POWER TRANSISTOR 300 W, up to 230 MHz, Enhancement Mode The silicon MOS transistor is designed for professional transmitter applications in the HF/VHF frequency range. Features Performance at 230 MHz, 50 Vdc Power Gain 14 dB Min Output Power 300 W Efficiency 50 % Min Absolute Maximum Ratings Parameters Sym Value ... See More ⇒
kp979b.pdf
Syntez Microelectronics KP979B SILICON MOS N-CHANNEL POWER TRANSISTOR 150 W, up to 230 MHz, Enhancement Mode The silicon MOS transistor is designed for professional transmitter applications in the HF/VHF frequency range. Features Performance at 230 MHz, 28 Vdc Power Gain 13 dB Min Output Power 150 W Efficiency 50 % Min Absolute Maximum Ratings Parameters Sym Value U... See More ⇒
Detailed specifications: KP8N60D, KP8N60F, KP8N65D, KP977AC, KP978A, KP978BC, KP978GC, KP978VC, RFP50N06, KP979B, KP979VC, KP980A, KP981A, KP981BC, KP981VC, KPA1716, KPA1750
Keywords - KP979A MOSFET specs
KP979A cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: NCEP058N85
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