PHB3N40E Datasheet and Replacement
Type Designator: PHB3N40E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: SOT404
PHB3N40E substitution
PHB3N40E Datasheet (PDF)
php3n40e phb3n40e phd3n40e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 2.5 Ag Low thermal resistanceRDS(ON) 3.5 sGENERAL DESCRIPTIONN-ch
php3n60e phb3n60e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP3N60E, PHB3N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.8 Ag Low thermal resistanceRDS(ON) 4.4 sGENERAL DESCRIPTIONN-channel, enh
php3n50e phb3n50e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP3N50E, PHB3N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 3.4 Ag Low thermal resistanceRDS(ON) 3 sGENERAL DESCRIPTIONN-channel, enhan
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