PHB3N40E Specs and Replacement
Type Designator: PHB3N40E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: SOT404
PHB3N40E substitution
- MOSFET ⓘ Cross-Reference Search
PHB3N40E datasheet
php3n40e phb3n40e phd3n40e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 2.5 A g Low thermal resistance RDS(ON) 3.5 s GENERAL DESCRIPTION N-ch... See More ⇒
php3n60e phb3n60e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP3N60E, PHB3N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.8 A g Low thermal resistance RDS(ON) 4.4 s GENERAL DESCRIPTION N-channel, enh... See More ⇒
php3n50e phb3n50e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP3N50E, PHB3N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 3.4 A g Low thermal resistance RDS(ON) 3 s GENERAL DESCRIPTION N-channel, enhan... See More ⇒
Detailed specifications: PHB11N50E, PHB125N06LT, PHB130N03LT, PHB21N06LT, PHB24N03LT, PHB2N50E, PHB2N60E, PHB37N06LT, IRF630, PHB3N50E, PHB3N60E, PHB42N03LT, PHB44N06LT, PHB45N03LT, PHB4N60E, PHB50N03LT, PHB50N06LT
Keywords - PHB3N40E MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
