KQB5N20 MOSFET Datasheet: N-Ch, 200V, 4.5A. Full specification with pinout and replacement list

KQB5N20 Specs and Replacement

Type Designator: KQB5N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-263

KQB5N20 substitution

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KQB5N20 datasheet

..1. Size:167K tysemi
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SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors SMD Type Transistors SMDType SMDType IC Product specification KQB5N20 TO-263 Unit mm Features 4.57+0.2 -0.2 +0.1 1.27-0.1 4.5A, 200 V. RDS(ON) =1.2 @VGS =10V Low gate charge (typical 6.0nC) Low Crss(typical 6.0pF) Fast switching +0.1 0.1max 1.27-0.1 100% avalanche tested lmproved dv/dt capabi... See More ⇒

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SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMDType SMDType IC Product specification KQB5N60 TO-263 Unit mm Features 4.57+0.2 -0.2 +0.1 5.0A, 600 V. RDS(ON) =2.0 @VGS =10V 1.27-0.1 Low gate charge (typical 16nC) Low Crss(typical 9.0pF) Fast switching +0.1 0.1max 100% avalanche teste... See More ⇒

Detailed specifications: KQB2N30, KQB2N50, KQB2N60, KQB2N80, KQB3N30, KQB3N40, KQB4N50, KQB4P40, AO4407A, KQB5N60, KQB630, KQB6N25, KQB6N70, KQB9N50, KQD1P50, KQD3P50, KQD5P10