2SK1180 Specs and Replacement
Type Designator: 2SK1180
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
ton ⓘ - Turn-on Time: 60 nS
Cossⓘ -
Output Capacitance: 250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO3PF
FM100
- MOSFET ⓘ Cross-Reference Search
2SK1180 datasheet
..1. Size:42K 1
2sk1180.pdf 
2SK1180 External dimensions 2 ...... FM100 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 500 V V 500 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 10 A I 250 A V = 500V, V = 0V D DSS DS GS I 40 (Tch 150 C) A V 2.0 4.0 V V = 10V, I = 250 A D... See More ⇒
..2. Size:265K inchange semiconductor
2sk1180.pdf 
isc N-Channel MOSFET Transistor 2SK1180 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for low voltage,high speed applications, Chopper regulator,DC-DC converter and... See More ⇒
8.2. Size:458K 1
2sk1188.pdf 
2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings IGSS IDSS VTH VDSS VGSS ID ID (pulse) PD Part EAS Conditions Conditions Conditions Number (nA) VGS ( A) VDS (V) VDS ID (mJ) (V) (V) (A) (A) (W) max (V) min max (V) min max (V) ( A) 2SK1188 60 20 10 40 25 2.1 500 20 250 60 2.0 4.0 10 250 2SK2420 60 20 30 120 40 38 100 20 100 60 2.0 4.... See More ⇒
8.3. Size:42K 1
2sk1187.pdf 
2SK1187 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 100 V V 100 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 12 A I 250 A V = 100V, V = 0V D DSS DS GS I V 2.0 4.0 V V = 10V, I = 250 A D (pulse) 48 (Tch 15... See More ⇒
8.4. Size:78K 1
2sk1179 2sk1183.pdf 
2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings IGSS IDSS VTH VDSS VGSS ID ID (pulse) PD Part EAS Conditions Conditions Conditions Number (nA) VGS ( A) VDS (V) VDS ID (mJ) (V) (V) (A) (A) (W) max (V) min max (V) min max (V) ( A) 2SK1179 500 20 8.5 34 85 400 500 20 250 500 2.0 4.0 10 250 2SK1183 200 20 3 12 25 30 500 20 250 200 2.0... See More ⇒
8.5. Size:41K 1
2sk1186.pdf 
2SK1186 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 100 V V 100 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 9I 250 A V = 100V, V = 0V D A DSS DS GS I V 2.0 4.0 V V = 10V, I = 250 A D (pulse) 36 (Tch 150... See More ⇒
8.6. Size:42K 1
2sk1184.pdf 
2SK1184 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 200 V V 200 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 5I 250 A V = 200V, V = 0V D A DSS DS GS I 20 (Tch 150 C) A V 2.0 4.0 V V = 10V, I = 250 A D (p... See More ⇒
8.7. Size:307K toshiba
2sk118.pdf 
2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Unit mm Condenser Microphone Applications High breakdown voltage VGDS = -50 V High input impedance I = -1 nA (max) (V = -30 V) GSS GS Low noise NF = 0.5dB (typ.) (R = 100 k , f = 120 Hz) G Small package Maximum Ratings (Ta = = 25... See More ⇒
8.8. Size:37K no
2sk1185.pdf 
2SK1185 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 100 V V 100 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 5I 250 A V = 100V, V = 0V D A DSS DS GS I 20 (Tch 150 C) A V 2.0 4.0 V V = 10V, I = 250 A D (... See More ⇒
8.9. Size:30K no
2sk1181.pdf 
2SK1181 External dimensions 2 ...... FM100 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 500 V V 500 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 13 A I 250 A V = 500V, V = 0V D DSS DS GS I 52 (Tch 150 C) A V 2.0 4.0 V V = 10V, I = 250 A ... See More ⇒
Detailed specifications: 2SK1109, 2SK1122, 2SK1123, 2SK1132, 2SK1133, 2SK1177, 2SK1178, 2SK1179, P55NF06, 2SK1181, 2SK1183, 2SK1184, 2SK1185, 2SK1186, 2SK1187, 2SK1188, 2SK1189
Keywords - 2SK1180 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.