KRF7509 Datasheet and Replacement
Type Designator: KRF7509
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: MICRO8
KRF7509 substitution
KRF7509 Datasheet (PDF)
krf7509.pdf

SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7509FeaturesGeneration V TechnologyUltra Low On-ResistanceDual N and P Channel MOSFETVery Small SOIC PackageLow Profile (
krf7501.pdf

SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7501FeaturesGeneration V TechnologyUlrtra Low On-ResistanceDual N-Channel MOSFETVery Small SOIC PackageLow Profile ( 1.1mm)Available in Tape & ReelFast SwitchingAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 20 AContinuous Drain Current, VGS @ 10V,Ta = 25 ID 2.4Continuous Drain Curr
krf7506.pdf

SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7506FeaturesGeneration V TechnologyUltra Low On-ResistanceDual P-Channel MOSFETVery Small SOIC PackageLow Profile ( 1.1mm)Available in Tape & ReelFast SwitchingAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitContinuous Drain Current, VGS @-10V@TA =25 ID -1.7Continuous Drain Current, VGS @-10V@TA =70 ID -1.4 A
krf7507.pdf

SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7507FeaturesGeneration V TechnologyUltra Low On-ResistanceDual N and P Channel MOSFETVery Small SOIC PackageLow Profile (
Datasheet: KRF7460 , KRF7476PBF , KRF7494 , KRF7501 , KRF7503 , KRF7504 , KRF7506 , KRF7507 , AO3400 , KRF7530 , KRF7555 , KRF7601 , KRF7603 , KRF7604 , KRF7606 , KRF7607 , KRF7663 .
History: AP4543GEH-HF | PDN2309S | AOE6932 | TSM75N75CZ | NCE60N1K0I
Keywords - KRF7509 MOSFET datasheet
KRF7509 cross reference
KRF7509 equivalent finder
KRF7509 lookup
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History: AP4543GEH-HF | PDN2309S | AOE6932 | TSM75N75CZ | NCE60N1K0I



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