KTD2005 MOSFET. Datasheet pdf. Equivalent

SMD Type ICSMD Type ICUltrahigh-Speed Switching ApplicationsKTD2005TSSOP-8Unit: mmFeaturesLow ON resistance.2.5V drive.Mounting height 1.1mm.Composite type, facilitating high-density mounting.5: Gate21: Drain16 : Source22 : Source17 : Source23 : Source18: Drain24: Gate1Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-to-Source Voltage V

SEMICONDUCTOR KTD2061TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATIONACDRIVER STAGE APPLICATIONDIM MILLIMETERSSCOROR TV CLASS B SOUND OUTPUT APPLICATION_A 10.0 0.3+_+B 15.0 0.3EC _2.70 0.3+D 0.76+0.09/-0.05FEATURES_E 3.2 0.2+High Breakdown Voltage : VCEO=180V(Min.) _F 3.0 0.3+

SEMICONDUCTOR KTD2058TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURESDIM MILLIMETERSSLow Saturation Voltage_A 10.0 0.3+_+B 15.0 0.3E: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A.C _2.70 0.3+D 0.76+0.09/-0.05Complementary to KTB1366._E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5

SEMICONDUCTOR KTD2060TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURES DIM MILLIMETERSSGood Linearity of hFE._A 10.0 0.3+_+B 15.0 0.3EComplementary to KTB1368.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (Ta=25 )RK _3.7 0.

SEMICONDUCTOR KTD2066TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT SWITCHING APPLICATION.LAMP SOLENOID DRIVER APPLICATION.ACDIM MILLIMETERSSFEATURES_A 10.0 0.3+_+B 15.0 0.3EHigh DC Current Gain C _2.70 0.3+D 0.76+0.09/-0.05: hFE=500 1500(IC=1A)._E 3.2 0.2+Low Collector Saturation Voltage _F 3.0 0.3+_12.0 0.3G +: VCE(sa

SEMICONDUCTOR KTD2059TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORGENERAL PURPOSE APPLICATION. ACFEATURESDIM MILLIMETERSSComplementary to KTB1367._A 10.0 0.3+_+B 15.0 0.3EC _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +MAXIMUM RATING (Ta=25 )H 0.5+0.1/-0.05_+J 13.6 0.5L LCHARACTERISTIC SYMBOL RATING UNITR

SEMICONDUCTOR KTD2092TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.ACDIM MILLIMETERSSFEATURES_A 10.0 0.3+_+B 15.0 0.3EHigh hFE : hFE=500 1500 (IC=0.5A).C _2.70 0.3+D 0.76+0.09/-0.05Low Collector Saturation :VCE(sat)=0.35V(Max.) (IC=1A)._E 3.2 0.2+_F 3.0 0.3+_12.0 0.

KTD2058(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOTR 3. EMITTER 3 21Features Low Collector Saturation Voltage : VCE(SAT) = 1. 0V(MAX) . Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V

SMD Type ICSMD Type ICN-Channel Silicon MOSFETKTD2017TSSOP-8Unit: mmFeaturesLow ON resistance.2.5V drive.Mounting height 1.1mmComposite type, facilitating high-density mounting.5: Gate21: Drain16 : Source22 : Source17 : Source23 : Source18: Drain24: Gate1Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-to-Source Voltage VDSS 20 VGate-

isc Silicon NPN Power Transistor KTD2061DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.0V(Max)@ (I = 0.5A, I = 50mA)CE(sat) C BComplement to Type KTB1369Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh Voltage applicationTV, monitor vertical

isc Silicon NPN Power Transistor KTD2058DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOCollector Power Dissipation: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BComplement to Type KTB1366Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIO

isc Silicon NPN Power Transistor KTD2059DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = 2.0V(Max)@ (I = 4A, I = 0.4A)CE(sat) C BComplement to Type KTB1367Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS