L2N60D Specs and Replacement

Type Designator: L2N60D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO-252

L2N60D substitution

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L2N60D datasheet

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 l2n60d l2n60f l2n60i l2n60p.pdf pdf_icon

L2N60D

LESHAN RADIO COMPANY, LTD. L2N60 600V N-Channel MOSFET 2 DESCRIPTION 1 3 ... See More ⇒

 9.1. Size:220K  blue-rocket-elect
 brl2n60.pdf pdf_icon

L2N60D

BRL2N60(CS2N60L) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25 ... See More ⇒

 9.2. Size:395K  lrc
 l2n600.pdf pdf_icon

L2N60D

LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), Vgs@10V, Ids@1A = 3.8 We declare that the material of product compliance with RoHS requirements. 1/5 LESHAN RADIO COMPANY, LTD. L2N600 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage... See More ⇒

 9.3. Size:1149K  belling
 bl2n60-p bl2n60-a bl2n60-u bl2n60-d.pdf pdf_icon

L2N60D

BL2N60 Power MOSFET 1 Description Step-Down Converter BL2N60, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Para... See More ⇒

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Detailed specifications: KX020N06, KX7N10L, KXP20N15, KXU03N25, KXU05N25, L1N60A, L1N60F, L1N60I, IRF640, L2N60F, L2N60I, L2N60P, L2N7002DMT1G, L2N7002DW1T1G, L2N7002LT1G, L2N7002WT1G, L2SK3018WT1G

Keywords - L2N60D MOSFET specs

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