PHB6ND50E
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHB6ND50E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 5.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5
Ohm
Package:
SOT404
PHB6ND50E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHB6ND50E
Datasheet (PDF)
..1. Size:58K philips
php6nd50e phb6nd50e.pdf 
Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 5.9 A High thermal cycling performanceg Low thermal resistance RDS(ON) 1.5 Fast reverse recovery di
9.1. Size:77K philips
php6n50e phb6n50e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP6N50E, PHB6N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 5.9 Ag Low thermal resistanceRDS(ON) 1.5 sGENERAL DESCRIPTIONN-channel, enh
9.2. Size:74K philips
php6n60e phb6n60e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP6N60E, PHB6N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 5.4 Ag Low thermal resistanceRDS(ON) 1.8 sGENERAL DESCRIPTIONN-channel, enh
Datasheet: PHB50N03LT
, PHB50N06LT
, PHB55N03LT
, PHB60N06LT
, PHB65N06LT
, PHB69N03LT
, PHB6N50E
, PHB6N60E
, IRF1407
, PHB7N60E
, PHB80N06LT
, PHB87N03LT
, PHB8N50E
, PHB8ND50E
, PHB9N60E
, PHD10N10E
, PHD12N10E
.
