PHB6ND50E Datasheet. Specs and Replacement

Type Designator: PHB6ND50E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Id| ⓘ - Maximum Drain Current: 5.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: SOT404

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PHB6ND50E datasheet

 ..1. Size:58K  philips
 php6nd50e phb6nd50e.pdf pdf_icon

PHB6ND50E

Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 5.9 A High thermal cycling performance g Low thermal resistance RDS(ON) 1.5 Fast reverse recovery di... See More ⇒

 9.1. Size:77K  philips
 php6n50e phb6n50e.pdf pdf_icon

PHB6ND50E

Philips Semiconductors Product specification PowerMOS transistors PHP6N50E, PHB6N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 5.9 A g Low thermal resistance RDS(ON) 1.5 s GENERAL DESCRIPTION N-channel, enh... See More ⇒

 9.2. Size:74K  philips
 php6n60e phb6n60e.pdf pdf_icon

PHB6ND50E

Philips Semiconductors Product specification PowerMOS transistors PHP6N60E, PHB6N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 5.4 A g Low thermal resistance RDS(ON) 1.8 s GENERAL DESCRIPTION N-channel, enh... See More ⇒

Detailed specifications: PHB50N03LT, PHB50N06LT, PHB55N03LT, PHB60N06LT, PHB65N06LT, PHB69N03LT, PHB6N50E, PHB6N60E, P55NF06, PHB7N60E, PHB80N06LT, PHB87N03LT, PHB8N50E, PHB8ND50E, PHB9N60E, PHD10N10E, PHD12N10E

Keywords - PHB6ND50E MOSFET specs

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