LP2305DSLT1G MOSFET Datasheet: P-Ch, 8V, 3.5A. Full specification with pinout and replacement list

LP2305DSLT1G Specs and Replacement

Type Designator: LP2305DSLT1G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.225 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 375 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: SOT-23

LP2305DSLT1G substitution

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LP2305DSLT1G datasheet

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LESHAN RADIO COMPANY, LTD. 12V P-Channel Enhancement-Mode MOSFET LP2305DSLT1G V = -12V DS S-LP2305DSLT1G RDS(ON), Vgs@-4.5V, Ids@" 3.5A = 68m R 3A = 81 DS(ON), Vgs@-2.5V, Ids@" m R 2A = 118 m DS(ON), Vgs@-1.8V, Ids@" 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance 2 SOT 23 (TO 236AB) Fully Characterized Avalan... See More ⇒

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LESHAN RADIO COMPANY, LTD. 8V P-Channel Enhancement-Mode MOSFET V = -8V DS LP2305DSLT1G RDS(ON), Vgs@-4.5V, Ids@" 3.5A = 58m R 3A = 71 DS(ON), Vgs@-2.5V, Ids@" m R 2A = 108 m DS(ON), Vgs@-1.8V, Ids@" 3 Features 1 Advanced trench process technology 2 High Density Cell Design For Ultra Low On-Resistance SOT 23 (TO 236AB) Fully Characterized Avalanche Voltage and ... See More ⇒

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