LS166 Datasheet. Specs and Replacement

Type Designator: LS166  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.05 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 300 Ohm

Package: SOIC-8

LS166 substitution

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LS166 datasheet

 ..1. Size:192K  linear-systems
 ls165 ls166.pdf pdf_icon

LS166

3N/LS165, 3N/LS166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN LS3N165, LS3N166 3N165, 3N166 ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) (T =25 C unless otherwise noted) A Drain-Source or Drain-Gate Voltage (NOTE 2) 3N165 40 V 3N166 30 V Gate-Gate Voltage 80 V SOIC TO-99 Drai... See More ⇒

Detailed specifications: LP3401LT1G, LP3407LT1G, LP3443LT1G, LP4101LT1G, LP4411ET1G, LP9435LT1G, LRK7002WT1G, LS165, AON6380, LS370, LS371, LSI1012XT1G, LXP152ALT1G, NUS5530MNR2G, NVA4001N, NVA4153N, NVA7002NT1G

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