PHB87N03LT Datasheet. Specs and Replacement

Type Designator: PHB87N03LT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: SOT404

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PHB87N03LT datasheet

 ..1. Size:102K  philips
 phb87n03lt phd87n03lt php87n03lt 5.pdf pdf_icon

PHB87N03LT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP87N03LT, PHB87N03LT Logic level FET PHD87N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Low thermal resistance Logic level compatible RDS(ON) 9.5 m (VGS = 10 V) g RDS(ON) 10.5 m (... See More ⇒

 6.1. Size:53K  philips
 phb87n03t 1.pdf pdf_icon

PHB87N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHB87N03T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC)1 75 A trench technology. The devi... See More ⇒

Detailed specifications: PHB60N06LT, PHB65N06LT, PHB69N03LT, PHB6N50E, PHB6N60E, PHB6ND50E, PHB7N60E, PHB80N06LT, 5N65, PHB8N50E, PHB8ND50E, PHB9N60E, PHD10N10E, PHD12N10E, PHD2N50E, PHD2N60E, PHD3055E

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs