All MOSFET. PHB87N03LT Datasheet

 

PHB87N03LT Datasheet and Replacement


   Type Designator: PHB87N03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 39 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: SOT404
 

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PHB87N03LT Datasheet (PDF)

 ..1. Size:102K  philips
 phb87n03lt phd87n03lt php87n03lt 5.pdf pdf_icon

PHB87N03LT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP87N03LT, PHB87N03LT Logic level FET PHD87N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Low thermal resistance Logic level compatible RDS(ON) 9.5 m (VGS = 10 V)gRDS(ON) 10.5 m (

 6.1. Size:53K  philips
 phb87n03t 1.pdf pdf_icon

PHB87N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHB87N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC)1 75 Atrench technology. The devi

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRLI630G | STM6922 | WPM2341-MS | SDF85NA50JD

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