All MOSFET. NVB5860NL Datasheet

 

NVB5860NL Datasheet and Replacement


   Type Designator: NVB5860NL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 283 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 220 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 1127 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: D2PAK
 

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NVB5860NL Datasheet (PDF)

 ..1. Size:112K  onsemi
 ntb5860nl nvb5860nl.pdf pdf_icon

NVB5860NL

NTB5860NL, NTP5860NL,NVB5860NLN-Channel Power MOSFET60 V, 220 A, 3.0 mWFeatureshttp://onsemi.com Low RDS(on) High Current CapabilityV(BR)DSS RDS(on) MAX ID MAX 100% Avalanche Tested3.0 mW @ 10 V60 V 220 A These Devices are Pb-Free, Halogen Free and are RoHS Compliant3.6 mW @ 4.5 V NVB Prefix for Automotive and Other Applications RequiringUnique Site

 6.1. Size:113K  onsemi
 ntb5860n ntp5860n nvb5860n.pdf pdf_icon

NVB5860NL

NTB5860N, NTP5860N,NVB5860NN-Channel Power MOSFET60 V, 220 A, 3.0 mWFeatureshttp://onsemi.com Low RDS(on) High Current Capability V(BR)DSS RDS(on) MAX ID MAX 100% Avalanche Tested60 V 3.0 mW @ 10 V 220 A These Devices are Pb-Free, Halogen Free and are RoHS Compliant NVB Prefix for Automotive and Other Applications RequiringDUnique Site and Control Change

Datasheet: NUS5530MNR2G , NVA4001N , NVA4153N , NVA7002NT1G , NVB25P06 , NVB5404N , NVB5426N , NVB5860N , 5N65 , NVB60N06 , NVB6410AN , NVB6411AN , NVB6412AN , NVB6413AN , NVD14N03R , NVD20N03L27 , NVD3055-094 .

History: STR2N2VH5

Keywords - NVB5860NL MOSFET datasheet

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