All MOSFET. PHB8ND50E Datasheet

 

PHB8ND50E Datasheet and Replacement


   Type Designator: PHB8ND50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: SOT404
 

 PHB8ND50E substitution

   - MOSFET ⓘ Cross-Reference Search

 

PHB8ND50E Datasheet (PDF)

 ..1. Size:90K  philips
 php8nd50e phb8nd50e phw8nd50e.pdf pdf_icon

PHB8ND50E

Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 8.5 A High thermal cycling performanceg Low thermal resistance RDS(ON) 0.85 Fast reverse

 9.1. Size:90K  philips
 php8n50e phb8n50e phw8n50e.pdf pdf_icon

PHB8ND50E

Philips Semiconductors Product specification PowerMOS transistors PHP8N50E, PHB8N50E, PHW8N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 8.5 Ag Low thermal resistanceRDS(ON) 0.85 sGENERAL DESCRIPTIONN-c

Datasheet: PHB69N03LT , PHB6N50E , PHB6N60E , PHB6ND50E , PHB7N60E , PHB80N06LT , PHB87N03LT , PHB8N50E , IRF530 , PHB9N60E , PHD10N10E , PHD12N10E , PHD2N50E , PHD2N60E , PHD3055E , PHD3N40E , PHD45N03LT .

Keywords - PHB8ND50E MOSFET datasheet

 PHB8ND50E cross reference
 PHB8ND50E equivalent finder
 PHB8ND50E lookup
 PHB8ND50E substitution
 PHB8ND50E replacement

 

 
Back to Top

 


 
.