NVD6824NL Datasheet. Specs and Replacement
Type Designator: NVD6824NL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 41 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 187 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: DPAK
NVD6824NL substitution
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NVD6824NL datasheet
nvd6824nl.pdf
NVD6824NL Power MOSFET 100 V, 20 mW, 41 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified http //onsemi.com AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) ID Compliant 20 mW @ 10 V 100 V 41 A MAXIMUM RATINGS (TJ = 25 C unless otherwise not... See More ⇒
nvd6820nl.pdf
NVD6820NL Power MOSFET 90 V, 17 mW, 50 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified http //onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) ID Compliant 16.7 mW @ 10 V 90 V 50 A MAXIMUM RATINGS (TJ = 25 C unl... See More ⇒
nvd6828nl.pdf
NVD6828NL Power MOSFET 90 V, 20 mW, 41 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified http //onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) ID Compliant 20 mW @ 10 V 90 V 41 A MAXIMUM RATINGS (TJ = 25 C unles... See More ⇒
Detailed specifications: NVD5890NL, NVD5890NT4G, NVD6414AN, NVD6415AN, NVD6416AN, NVD6416ANL, NVD6495NL, NVD6820NL, AO4468, NVD6828NL, NVDD5894NL, NVE4153N, NVF2201N, NVF2955, NVF3055-100, NVF3055L108, NVF5P03
Keywords - NVD6824NL MOSFET specs
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