All MOSFET. NVD6828NL Datasheet

 

 

NVD6828NL Datasheet and Replacement


   Type Designator: NVD6828NL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 41 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: DPAK
 

 NVD6828NL substitution

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NVD6828NL Datasheet (PDF)

 ..1. Size:103K  onsemi
 nvd6828nl.pdf pdf_icon

NVD6828NL

NVD6828NLPower MOSFET90 V, 20 mW, 41 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specifiedhttp://onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant20 mW @ 10 V90 V 41 AMAXIMUM RATINGS (TJ = 25C unles

 8.1. Size:104K  onsemi
 nvd6824nl.pdf pdf_icon

NVD6828NL

NVD6824NLPower MOSFET100 V, 20 mW, 41 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specifiedhttp://onsemi.com AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant20 mW @ 10 V100 V 41 AMAXIMUM RATINGS (TJ = 25C unless otherwise not

 8.2. Size:103K  onsemi
 nvd6820nl.pdf pdf_icon

NVD6828NL

NVD6820NLPower MOSFET90 V, 17 mW, 50 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specifiedhttp://onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant16.7 mW @ 10 V90 V 50 AMAXIMUM RATINGS (TJ = 25C unl

Datasheet: NVD5890NT4G , NVD6414AN , NVD6415AN , NVD6416AN , NVD6416ANL , NVD6495NL , NVD6820NL , NVD6824NL , IRF730 , NVDD5894NL , NVE4153N , NVF2201N , NVF2955 , NVF3055-100 , NVF3055L108 , NVF5P03 , NVF6P02 .

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