NVMFS5833N Datasheet. Specs and Replacement

Type Designator: NVMFS5833N  📄📄 

Marking Code: 5833

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V

Qg ⓘ - Total Gate Charge: 32.5 nC

tr ⓘ - Rise Time: 19.5 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: SO-8FL

NVMFS5833N substitution

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NVMFS5833N datasheet

 ..1. Size:71K  onsemi
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NVMFS5833N

NVMFS5833N Power MOSFET 40 V, 7.5 mW, 86 A, Single N-Channel, SO-8FL Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable NVMFS5833NWF - Wettable Franks Option for Enhanced Optical 40 V 7.5 mW @ 10 V 86 A Inspection These Devices are Pb-Free and are RoHS Compliant D (5)... See More ⇒

 6.1. Size:108K  onsemi
nvmfs5832nl.pdf pdf_icon

NVMFS5833N

NVMFS5832NL Power MOSFET 40 V, 4.2 mW, 120 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses http //onsemi.com AEC-Q101 Qualified These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX 4.2 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) ... See More ⇒

 6.2. Size:112K  onsemi
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NVMFS5833N

NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N-Channel Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge NVMFS5834NLWF - Wettable Flanks Product V(BR)DSS RDS(ON) MAX ID MAX NVMFS Prefix for Automotive and Other Applications Requiring 9.3 mW @ 10 V Unique Site and Control Change Requirements; AEC-Q101 40 V 75 A 13.6... See More ⇒

 6.3. Size:110K  onsemi
nvmfs5830nl.pdf pdf_icon

NVMFS5833N

NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5830NLWF - Wettable Flanks Product V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are... See More ⇒

Detailed specifications: NVMFD5873NL, NVMFS4C01N, NVMFS4C03N, NVMFS4C05N, NVMFS5113PL, NVMFS5826NL, NVMFS5830NL, NVMFS5832NL, K4145, NVMFS5834NL, NVMFS5844NL, NVMFS5885NL, NVMFS5C404N, NVMFS5C404NL, NVMFS5C410NL, NVMFS5C423NL, NVMFS5C442NL

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