PHD45N03LT Specs and Replacement
Type Designator: PHD45N03LT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOT428
PHD45N03LT substitution
- MOSFET ⓘ Cross-Reference Search
PHD45N03LT datasheet
php45n03lt phb45n03lt phd45n03lt.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP45N03LT, PHB45N03LT, PHD45N03LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 45 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V) g Low thermal ... See More ⇒
php45n03lta phb45n03lta phd45n03lta.pdf
PHP/PHB/PHD45N03LTA N-channel enhancement mode field-effect transistor Rev. 02 02 November 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP45N03LTA in SOT78 (TO-220AB) PHB45N03LTA in SOT404 (D2-PAK) PHD45N03LTA in SOT428 (D-PAK). 2. Features Low on-state resistance ... See More ⇒
phd45n03lta.pdf
PHD45N03LTA www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET AB... See More ⇒
Detailed specifications: PHB8ND50E , PHB9N60E , PHD10N10E , PHD12N10E , PHD2N50E , PHD2N60E , PHD3055E , PHD3N40E , IRFP450 , PHD50N03LT , PHD55N03LT , PHD69N03LT , PHD6N10E , PHP10N10E , PHP10N60E , PHP11N50E , PHP125N06LT .
Keywords - PHD45N03LT MOSFET specs
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PHD45N03LT replacement
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