NVTFS4C05N Datasheet. Specs and Replacement

Type Designator: NVTFS4C05N  📄📄 

Marking Code: 05WF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V

Qg ⓘ - Total Gate Charge: 14.5 nC

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 1224 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm

Package: WDFN8

NVTFS4C05N substitution

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NVTFS4C05N datasheet

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NVTFS4C05N

NVTFS4C05N Power MOSFET 30 V, 3.6 mW, 102 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C05NWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring 3.6 mW @ ... See More ⇒

 6.1. Size:81K  onsemi
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NVTFS4C05N

NVTFS4C06N Power MOSFET 30 V, 4.2 mW, 71 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C06NWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring 4.2 mW @ 1... See More ⇒

 6.2. Size:82K  onsemi
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NVTFS4C05N

NVTFS4C08N Power MOSFET 30 V, 5.9 mW, 55 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C08NWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring 5.9 mW @ 1... See More ⇒

 7.1. Size:82K  onsemi
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NVTFS4C05N

NVTFS4C25N Power MOSFET 30 V, 17 mW, 22 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS4C25NWF - Wettable Flanks Product 17 mW @ 10 V NVT Prefix for Automotive and Other Applications Requiring... See More ⇒

Detailed specifications: NVMS5P02R2G, NVR1P02, NVR4003N, NVR4501N, NVR5198NL, NVS4001N, NVS4409N, NVTA7002N, 5N60, NVTFS4C06N, NVTFS4C08N, NVTFS4C10N, NVTFS4C13N, NVTFS4C25N, NVTFS5124PL, NVTJD4001N, NVTR01P02L

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.