NX7002BKM Datasheet. Specs and Replacement

Type Designator: NX7002BKM  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.3 nS

Cossⓘ - Output Capacitance: 4.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: DFN1006-3

NX7002BKM substitution

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NX7002BKM datasheet

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NX7002BKM

NX7002BKM 60 V, N-channel Trench MOSFET 3 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ... See More ⇒

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NX7002BKM

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NX7002BKM

NX7002BKW 60 V, single N-channel Trench MOSFET 20 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroSt... See More ⇒

 6.2. Size:294K  nxp
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NX7002BKM

NX7002BKS 60 V, dual N-channel Trench MOSFET 12 May 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroS... See More ⇒

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Detailed specifications: NX1029X, NX2020N2, NX2020P1, NX3020NAK, NX7002AK, NX7002AKS, NX7002AKW, NX7002BK, IRFZ46N, NX7002BKMB, NX7002BKS, NX7002BKW, NX7002BKXB, OM6005SC, OM6027SC, OM60N10SC, OM6101ST

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