NX7002BKW Datasheet. Specs and Replacement
Type Designator: NX7002BKW 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.265 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.3 nS
Cossⓘ - Output Capacitance: 4.6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: SC-70
NX7002BKW substitution
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NX7002BKW datasheet
nx7002bkw.pdf
NX7002BKW 60 V, single N-channel Trench MOSFET 20 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroSt... See More ⇒
nx7002bkm.pdf
NX7002BKM 60 V, N-channel Trench MOSFET 3 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ... See More ⇒
nx7002bks.pdf
NX7002BKS 60 V, dual N-channel Trench MOSFET 12 May 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroS... See More ⇒
Detailed specifications: NX3020NAK, NX7002AK, NX7002AKS, NX7002AKW, NX7002BK, NX7002BKM, NX7002BKMB, NX7002BKS, IRF9640, NX7002BKXB, OM6005SC, OM6027SC, OM60N10SC, OM6101ST, OM6104ST, OM6105SC, OM6106SC
Keywords - NX7002BKW MOSFET specs
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