PDNM6UT20V05 MOSFET. Datasheet pdf. Equivalent
Type Designator: PDNM6UT20V05
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 0.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.64 nC
trⓘ - Rise Time: 8.5 nS
Cossⓘ - Output Capacitance: 28 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
Package: SOT-363
PDNM6UT20V05 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PDNM6UT20V05 Datasheet (PDF)
pdnm6ut20v05.pdf
PDNM6UT20V05 Dual N-Channel, Digital FET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)() ID(A) 20 0.29@ VGS=4.5V 0.5SOT-363 S2 1 D2 6 G2 2 G1 5 4 S1 3 D1 Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 20 VGat
pdnm6t20v7e.pdf
PDNM6T20V7E Dual N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)(m) ID(A) 20 16@ VGS=4.5V 7Internal Structure Top View(SOT23-6) D1(D2) S1 6 G1 1 D1(D2) 5 D1(D2)2 G1 G2 4 S2 3 G2 S1 S2 Absolute maximum rating@25 Parameter Symbol M
pdnm6et20v05.pdf
PDNM6ET20V05 Dual N-Channel, Digital FET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary V (V) R () I (A) DS DS(on) D20 0.29@ V =4.5V 0.5 GS1 S2 6 S2 D2 D2 5 G2 G1 G2 G1 2 3 4 S1 S1 D1 D1 Circuit Diagram Marking (Top View) Absolute maximum rating@25 Parameter
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: STW220NF75 | KI138K
History: STW220NF75 | KI138K
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