PHP12N10E MOSFET. Datasheet pdf. Equivalent
Type Designator: PHP12N10E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 75 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 14 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
Package: SOT78
PHP12N10E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHP12N10E Datasheet (PDF)
php12n10e 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor PHP12N10E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. The device is VDS Drain-source voltage 100 Vintended for use in Switched Mode ID Drain current (DC) 14 APower Supplies (SMPS), motor Ptot Total power dissipation 7
phb12nq15t phd12nq15t php12nq15t 1.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP12NQ15T, PHB12NQ15T PHD12NQ15TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 12.5 AgRDS(ON) 200 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in
php129nq04lt phb129nq04lt.pdf
PHP/PHB129NQ04LTN-channel TrenchMOS logic level FETRev. 01 11 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC
php125n06lt 4.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP125N06LT, PHB125N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 75 A Stable off-state characteristics High thermal cycling performance RDS(ON) 8 m (VGS = 5 V)g Low thermal resistance
phb129nq04lt php129nq04lt.pdf
PHP/PHB129NQ04LTN-channel TrenchMOS logic level FETRev. 01 11 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC
php125n06t 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP125N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC)1 75 Afeatures very low on-state
php125 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETPHP125P-channel enhancement modeMOS transistor1997 Jun 18Product specificationSupersedes data of 1996 Apr 02File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement modePHP125MOS transistorFEATURES DESCRIPTION High-speed switching P-channel enhancement mode MOS transistor in an 8-p
Datasheet: PHD50N03LT , PHD55N03LT , PHD69N03LT , PHD6N10E , PHP10N10E , PHP10N60E , PHP11N50E , PHP125N06LT , IRFZ24N , PHP130N03LT , PHP18N20E , PHP21N06LT , PHP2N50E , PHP2N60E , PHP3055E , PHP3055L , PHP33N10 .
