PHM21NQ15T Datasheet and Replacement
Type Designator: PHM21NQ15T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 22.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 285 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: QLPAK
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PHM21NQ15T Datasheet (PDF)
phm21nq15t.pdf

PHM21NQ15TTrenchMOS standard level FETRev. 02 11 September 2003 Product dataM3D8791. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features SOT96 (SO8) footprint compatible Low thermal resistance Surface mounted package Low profile.1.3 Applications DC-to-DC primary side Portab
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IRF3710ZSPBF | 2SK345 | STL50NH3LL | IXTB30N100L | WSD3042DN56 | 2SK135 | ASDM30N55E
Keywords - PHM21NQ15T MOSFET datasheet
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History: IRF3710ZSPBF | 2SK345 | STL50NH3LL | IXTB30N100L | WSD3042DN56 | 2SK135 | ASDM30N55E



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