PHM21NQ15T Specs and Replacement
Type Designator: PHM21NQ15T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 285 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: QLPAK
PHM21NQ15T substitution
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PHM21NQ15T datasheet
phm21nq15t.pdf
PHM21NQ15T TrenchMOS standard level FET Rev. 02 11 September 2003 Product data M3D879 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features SOT96 (SO8) footprint compatible Low thermal resistance Surface mounted package Low profile. 1.3 Applications DC-to-DC primary side Portab... See More ⇒
Detailed specifications: PH9030L, PH955L, PH9930L, PHK4NQ10T, PHK4NQ20T, PHM12NQ20T, PHM15NQ20T, PHM18NQ15T, TK10A60D, PHM25NQ10T, PHM30NQ10T, PHT2NQ10T, PI5101-00-LGIZ, PJ2301, PJ2306, PJ4N3KDW, QH8KA1
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