All MOSFET. PJ2306 Datasheet

 

PJ2306 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PJ2306
   Marking Code: *06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 3.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.8 nC
   trⓘ - Rise Time: 12.8 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT-23

 PJ2306 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PJ2306 Datasheet (PDF)

 ..1. Size:214K  panjit
 pj2306.pdf

PJ2306 PJ2306

PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD ProtectedUnitinch(mm)SOT-23FEATURES RDS(ON), VGS@10V,IDS@3.2A=65m RDS(ON), VGS@4.5V,IDS@2.8A=85m0.120(3.04)0.110(2.80) Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Load Switch, PWM Applic

 9.1. Size:290K  panjit
 pj2301.pdf

PJ2306 PJ2306

PJ230120V P-Channel Enhancement Mode MOSFETFEATURES RDS(ON), VGS@-1.8V,ID@-1.5A=200m RDS(ON), VGS@-4.5V,ID@-2.2A=105m0.120(3.04) Advanced Trench Process Technology0.110(2.80) High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC converters Low gate charge 0.056(1

 9.2. Size:380K  panjit
 pj2301-au.pdf

PJ2306 PJ2306

PPJ2301-AU 20V P-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm) Voltage -20 V Current -3.1A Features RDS(ON) , VGS@-4.5V, ID@-3.1A

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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