All MOSFET. PJ2306 Datasheet

 

PJ2306 Datasheet and Replacement


   Type Designator: PJ2306
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12.8 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT-23
 

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PJ2306 Datasheet (PDF)

 ..1. Size:214K  panjit
 pj2306.pdf pdf_icon

PJ2306

PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD ProtectedUnitinch(mm)SOT-23FEATURES RDS(ON), VGS@10V,IDS@3.2A=65m RDS(ON), VGS@4.5V,IDS@2.8A=85m0.120(3.04)0.110(2.80) Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Load Switch, PWM Applic

 9.1. Size:290K  panjit
 pj2301.pdf pdf_icon

PJ2306

PJ230120V P-Channel Enhancement Mode MOSFETFEATURES RDS(ON), VGS@-1.8V,ID@-1.5A=200m RDS(ON), VGS@-4.5V,ID@-2.2A=105m0.120(3.04) Advanced Trench Process Technology0.110(2.80) High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC converters Low gate charge 0.056(1

 9.2. Size:380K  panjit
 pj2301-au.pdf pdf_icon

PJ2306

PPJ2301-AU 20V P-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm) Voltage -20 V Current -3.1A Features RDS(ON) , VGS@-4.5V, ID@-3.1A

Datasheet: PHM15NQ20T , PHM18NQ15T , PHM21NQ15T , PHM25NQ10T , PHM30NQ10T , PHT2NQ10T , PI5101-00-LGIZ , PJ2301 , 5N65 , PJ4N3KDW , QH8KA1 , QH8KA2 , QH8MA2 , QH8MA3 , QH8MA4 , QJD1210006 , QJD1210007 .

History: AON6520 | IXTY1N80 | SST4118 | DMP3056LDM | BUK9635-100A | DH100P30F | E10P02

Keywords - PJ2306 MOSFET datasheet

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