QM01N65L Datasheet and Replacement
Type Designator: QM01N65L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 6.03 nC
tr ⓘ - Rise Time: 18.4 nS
Cossⓘ - Output Capacitance: 17.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: TO-92
QM01N65L substitution
QM01N65L Datasheet (PDF)
qm01n65l.pdf

QM01N65L 1 2011-06-15 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM01N65L is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 12 0.2Amost of the synchronous buck converterapplications . Applications The QM01N65L meet the RoHS and
qm01n65u.pdf

QM01N65U 1 2011-05-25 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM01N65U is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 12 1.2Amost of the synchronous buck converterapplications . Applications The QM01N65U meet the RoHS and
qm01n65d.pdf

QM01N65D 1 2011-06-22 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM01N65D is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 12 1.2Amost of the synchronous buck converterapplications . Applications The QM01N65D meet the RoHS and
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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