QM01N65U Datasheet and Replacement
Type Designator: QM01N65U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 41.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18.4 nS
Cossⓘ - Output Capacitance: 17.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: TO-251
QM01N65U substitution
QM01N65U Datasheet (PDF)
qm01n65u.pdf

QM01N65U 1 2011-05-25 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM01N65U is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 12 1.2Amost of the synchronous buck converterapplications . Applications The QM01N65U meet the RoHS and
qm01n65l.pdf

QM01N65L 1 2011-06-15 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM01N65L is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 12 0.2Amost of the synchronous buck converterapplications . Applications The QM01N65L meet the RoHS and
qm01n65d.pdf

QM01N65D 1 2011-06-22 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM01N65D is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 12 1.2Amost of the synchronous buck converterapplications . Applications The QM01N65D meet the RoHS and
Datasheet: QM0016F , QM0016P , QM0016S , QM0018AD , QM0020AP , QM0020P , QM01N65D , QM01N65L , HY1906P , QM02N65D , QM02N65U , QM03N65D , QM03N65F , QM04N60F , QM04N65B , QM04N65D , QM04N65F .
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