QM01N65U
MOSFET. Datasheet pdf. Equivalent
Type Designator: QM01N65U
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 41.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 1.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.03
nC
trⓘ - Rise Time: 18.4
nS
Cossⓘ -
Output Capacitance: 17.8
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 12
Ohm
Package:
TO-251
QM01N65U
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QM01N65U
Datasheet (PDF)
..1. Size:324K ubiq
qm01n65u.pdf 
QM01N65U 1 2011-05-25 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM01N65U is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 12 1.2Amost of the synchronous buck converterapplications . Applications The QM01N65U meet the RoHS and
7.1. Size:317K ubiq
qm01n65l.pdf
QM01N65L 1 2011-06-15 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM01N65L is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 12 0.2Amost of the synchronous buck converterapplications . Applications The QM01N65L meet the RoHS and
7.2. Size:318K ubiq
qm01n65d.pdf
QM01N65D 1 2011-06-22 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM01N65D is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 12 1.2Amost of the synchronous buck converterapplications . Applications The QM01N65D meet the RoHS and
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