All MOSFET. PHP3N40E Datasheet

 

PHP3N40E MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHP3N40E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: SOT78

 PHP3N40E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHP3N40E Datasheet (PDF)

 ..1. Size:103K  philips
php3n40e phb3n40e phd3n40e.pdf

PHP3N40E
PHP3N40E

Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 2.5 Ag Low thermal resistanceRDS(ON) 3.5 sGENERAL DESCRIPTIONN-ch

 ..2. Size:75K  philips
php3n40e 3.pdf

PHP3N40E
PHP3N40E

Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 2.5 Ag Low thermal resistanceRDS(ON) 3.5 sGENERAL DESCRIPTIONN-ch

 9.1. Size:79K  philips
php3n60e phb3n60e.pdf

PHP3N40E
PHP3N40E

Philips Semiconductors Product specification PowerMOS transistors PHP3N60E, PHB3N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.8 Ag Low thermal resistanceRDS(ON) 4.4 sGENERAL DESCRIPTIONN-channel, enh

 9.2. Size:53K  philips
php3n20l 2.pdf

PHP3N40E
PHP3N40E

Philips Semiconductors Product specification PowerMOS transistor PHP3N20L Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 200 Vavalanche energy capability, stable ID Drain current (DC) 3.5 Ablocking voltage, fast swit

 9.3. Size:52K  philips
php3n50 1.pdf

PHP3N40E
PHP3N40E

Philips Semiconductors Product specification PowerMOS transistor PHP3N50 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 500 Vavalanche energy capability, stable ID Drain current (DC) 3.4 Aoff-state characteristics, fast Ptot Total power dissipati

 9.4. Size:52K  philips
php3n20e 1.pdf

PHP3N40E
PHP3N40E

Philips Semiconductors Product specification PowerMOS transistor PHP3N20E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 200 Vavalanche energy capability, stable ID Drain current (DC) 3.5 Ablocking voltage, fast switching and Ptot Total power dis

 9.5. Size:78K  philips
php3n50e phb3n50e.pdf

PHP3N40E
PHP3N40E

Philips Semiconductors Product specification PowerMOS transistors PHP3N50E, PHB3N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 3.4 Ag Low thermal resistanceRDS(ON) 3 sGENERAL DESCRIPTIONN-channel, enhan

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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