QM2410S
MOSFET. Datasheet pdf. Equivalent
Type Designator: QM2410S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 6.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.5
nC
trⓘ - Rise Time: 32
nS
Cossⓘ -
Output Capacitance: 70
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025
Ohm
Package:
SOP-8
QM2410S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QM2410S
Datasheet (PDF)
..1. Size:336K ubiq
qm2410s.pdf 
QM2410S N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2410S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 25m 6.2Afor most of the small power switching and load switch applications. Applications The QM2410S meet the RoHS and Green Product requi
8.1. Size:340K ubiq
qm2410j.pdf
QM2410J N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2410J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37m 5.1Afor most of the small power switching and load switch applications. Applications The QM2410J meet the RoHS and Green Product requi
8.2. Size:303K ubiq
qm2410k.pdf
QM2410K N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2410K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37m 4.2Afor most of the small power switching and load switch applications. Applications The QM2410K meet the RoHS and Green Product requir
8.3. Size:337K ubiq
qm2410d.pdf
QM2410D N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2410D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 25m 22Afor most of the small power switching and load switch applications. Applications The QM2410D meet the RoHS and Green Product require
8.4. Size:330K ubiq
qm2410g.pdf
QM2410G N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2410G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37m 5.1Afor most of the small power switching and load switch applications. Applications The QM2410G meet the RoHS and Green Product requi
8.5. Size:344K ubiq
qm2410v.pdf
QM2410V N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2410V is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37m 4.5Afor most of the small power switching and load switch applications. Applications The QM2410V meet the RoHS and Green Product requir
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