QM2518C1 MOSFET Datasheet: N-Ch, 20V, 1.52A. Full specification with pinout and replacement list

QM2518C1 Specs and Replacement

   Type Designator: QM2518C1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 0.33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.52 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 26.6 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SOT-363

QM2518C1 substitution

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QM2518C1 datasheet

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QM2518C1 Dual N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2518C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 90m 1.52A for most of the small power switching and load switch applications. Applications The QM2518C1 meet the RoHS and Green Prod... See More ⇒

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QM2517C1 Dual P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2517C1 is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 240m -1A for most of the small power switching and load switch applications. Applications The QM2517C1 meet the RoHS and Green Produ... See More ⇒

Detailed specifications: QM2429S , QM2502M9 , QM2502S , QM2502W , QM2504W , QM2506W , QM2507W , QM2517C1 , IRFZ48N , QM2520C1 , QM2601S , QM2602S , QM2604V , QM2605S , QM2605V , QM2606C1 , QM2607C1 .