QM2605V
MOSFET. Datasheet pdf. Equivalent
Type Designator: QM2605V
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 3.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.2
nC
trⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 41
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048
Ohm
Package:
TSOP6
QM2605V
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
QM2605V
Datasheet (PDF)
..1. Size:412K ubiq
qm2605v.pdf 
QM2605V N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2605V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 48m 3.8Acharge for most of the small power switching and -20V 130m -2.5Aload switch applications. The QM2605V meet the RoHS and Gr
8.1. Size:417K ubiq
qm2605s.pdf
QM2605S N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2605S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 42m 4.6Acharge for most of the small power switching and -20V 130m -2.8Aload switch applications. The QM2605S meet the RoHS and Gr
9.1. Size:409K ubiq
qm2601s.pdf
QM2601S N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2601S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 18m 7.2Acharge for most of the small power switching and -20V 50m -4.5Aload switch applications. The QM2601S meet the RoHS and Gree
9.2. Size:413K ubiq
qm2602s.pdf
QM2602S N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2602S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 16m 7.7 Acharge for most of the small power switching and -20V 50m -4.6 A load switch applications. The QM2602S meet the RoHS and G
9.3. Size:410K ubiq
qm2604v.pdf
QM2604V N-Ch and P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2604V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 50m 3.8Acharge for most of the small power switching and -20V 155 m -2.3Aload switch applications. The QM2604V meet the RoHS an
9.4. Size:392K ubiq
qm2606c1.pdf
QM2606C1 N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2606C1 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 90m 1.52Acharge for most of the small power switching and -20V 240m -1Aload switch applications. The QM2606C1 meet the RoHS and G
9.5. Size:360K ubiq
qm2607c1.pdf
QM2607C1 N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2607C1 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 115m 1.3 Acharge for most of the small power switching and -20V 255m -0.94 Aload switch applications. The QM2607C1 meet the RoHS
9.6. Size:408K ubiq
qm2608n8.pdf
QM2608N8 N-Ch and P-Ch Fast Switching MOSFETsGeneral Description Product SummeryThe QM2608N8 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 48m 3.8Acharge for most of the small power switching and -20V 70m -3.4Aload switch applications. The QM2608N8 meet the RoHS and G
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