PHP6N10E
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHP6N10E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 6.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.54
Ohm
Package:
SOT78
PHP6N10E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHP6N10E
Datasheet (PDF)
..1. Size:53K philips
php6n10e 1.pdf 
Philips Semiconductors Product specification PowerMOS transistor PHP6N10E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 100 Vavalanche energy capability, stable ID Drain current (DC) 6.3 Ablocking voltage, fast switching and Ptot Total power dis
9.1. Size:77K philips
php6n50e phb6n50e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP6N50E, PHB6N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 5.9 Ag Low thermal resistanceRDS(ON) 1.5 sGENERAL DESCRIPTIONN-channel, enh
9.2. Size:58K philips
php6nd50e phb6nd50e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 5.9 A High thermal cycling performanceg Low thermal resistance RDS(ON) 1.5 Fast reverse recovery di
9.3. Size:63K philips
php6nd50e 2.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 5.9 A High thermal cycling performanceg Low thermal resistance RDS(ON) 1.5 Fast reverse recovery di
9.4. Size:74K philips
php6n60e phb6n60e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP6N60E, PHB6N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 5.4 Ag Low thermal resistanceRDS(ON) 1.8 sGENERAL DESCRIPTIONN-channel, enh
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